Chip execs see 20 nm variants, 3-D ICs ahead
Rick Merritt, EETimes
4/27/2012 12:43 AM EDT
Those were just two data points from wide ranging discussions at the GSA Silicon Summit here. Separately, executives said a variety of 3-D ICs will hit the market in 2014 despite numerous challenges, and CMOS scaling is slowing down but still viable through a 7 nm node.
To read the full article, click here
Related Semiconductor IP
- ReRAM NVM in DB HiTek 130nm BCD
- UFS 5.0 Host Controller IP
- PDM Receiver/PDM-to-PCM Converter
- Voltage and Temperature Sensor with integrated ADC - GlobalFoundries® 22FDX®
- 8MHz / 40MHz Pierce Oscillator - X-FAB XT018-0.18µm
Related News
- Intel Technology and Manufacturing Day in China Showcases 10 nm Updates, FPGA Progress and Industry's First 64-Layer 3D NAND for Data Center
- Europe Leaps Ahead in Global AI Arms Race, Joining $20 Million Investment in NeuReality to Advance Affordable, Carbon-Neutral AI Data Centers
- InPsytech Tapes Out F2F SoIC Design Compliant with UCIE 2.0 Standard Enabling High-Speed Interconnects for 3D Heterogeneous Integration
- UK microcontroller startup finds alternative ways to make chip variants
Latest News
- EnSilica selected for UK CHERI Adoption Collective
- CHIPS Alliance launches the SV Tools Project for open source development of SystemVerilog/UVM codebases
- Socionext Collaborates with Arm to Advance AI Data Center Infrastructure with Arm Total Design
- EDGEAI to Revolutionize Smart Metering with BrainChip Akida 2 License
- IC Manage Advances GDP-XL to GDP-AI — Boosting Designer Efficiency and Accelerating Workflows