Bluetooth Low Energy IP
Filter
Compare
72
IP
from 18 vendors
(1
-
10)
-
Bluetooth low energy v5.4 Baseband Controller, Protocol Software Stack and Profiles IP
- Implements Link layer and physical layer of LE controller specification
- v5.1 Madrid Features: DF - AoA/AoD
- Firmware portable for 8/16/32-bit microcontrollers
- Support for multiple processor bus and flexible RF
-
Ultra low-power 2.4 GHz transceiver for Bluetooth Low Energy 5
- Voltage supply: 1.3V down to 1V, with graceful degradation down to 0.9V
- Compliant with direct operation from 1.2V battery
-
Bluetooth low energy v5.3 Software based Linklayer IP
- Most procedures for the protocols implemented in software
- Minimum set of standard functions in hardware
- Designed for portability across 32-bit processors
- Architecture of firmware for low code and data footprint
-
v5.2 Link Layer, Physical Layer, Software Stack and Profiles for Bluetooth low energy
- Reduced development risk
- Faster time-to-market
- Reduced product costs
-
Bluetooth Low Energy (BLE) RF IP
- Single supply voltage: 1.1V to 1.8V
- Operating junction temperature: -40ºC to 85ºC
- RF output power: +10dBm
-
VeriSilicon Bluetooth Low Energy (BLE) RF IP
- Single supply voltage: 1.5V to 3.6V
- Operating junction temperature: -40ºC to 85ºC
- RF output power: +8dBm
- Low power consumption: RX: <12mW; TX: <14mW@0dBm
-
Bluetooth Low Energy (BLE) RF IP
- Single supply voltage: 1.5V to 3.6V
- Operating junction temperature: -40ºC to 85ºC
- RF output power: upto +2dBm
- Low power consumption: RX: <12mW; TX: <15mW@0dBm
-
Bluetooth Low Energy 5.2 Baseband Processor Hardware IP and LL Firmware
- Uncoded PHY: 1Mbps/2Mbps
- Coded PHY: 1Mbps - Coding Rate S=2 and S=8
- Data whitening
- CRC
-
Bluetooth Low Energy (BLE) analog PHY
- Leading technology of SMIC 55nm LL_RF process.
- Operating junction temperature: -40°C to 85°.
- BLE interface.(rfio)
-
Bluetooth LE v5.3 / Zigbee 3 RF/PHY for Global Foundry 55nm (Silicon proven IP)
- Silicon area < 1.6 mm2
