VeriSilicon Bluetooth Low Energy (BLE) RF IP
Overview
Bluetooth Low Energy (BLE) RF IP provides a transceiver designed for Bluetooth Smart applications. It is compliant with the BLE specification (part of Bluetooth 5.2, volume- 6) and supports GFSK modulation and demodulation. When combined with the Bluetooth Smart baseband and controller, this IP serves as a complete Bluetooth Smart solution. A Slave Serial Peripheral Interface (SPI) is used for connection to baseband or external MCU. Besides, this RF IP integrates on-chip Balun and TX/RX switch to save BOM. Moreover, LDOs and XO have been built in for power and clock generation.
Key Features
- Single supply voltage: 1.5V to 3.6V
- Operating junction temperature: -40ºC to 85ºC
- RF output power: +8dBm
- Low power consumption: RX: <12mW; TX: <14mW@0dBm
- RX sensitivity: < -98dBm
- Built-in LDOs
- Built-in on-chip Balun to save BOM
- Built-in 16MHz Crystal Oscillator Driver
- Built-in RSSI function
Deliverables
- Design Kit & Tape-out Kit
- IP Datasheet and Application
Technical Specifications
Foundry, Node
SMIC, 55nm
Maturity
Silicon Proven