Embedded Memories IP for TSMC

Compare 493 Embedded Memories IP for TSMC from 14 vendors (1 - 10)

Ultra Low Power Embedded SRAM - TSMC 22ULL
- Single port, single voltage rail synchronous SRAM
- Hierarchical Bit Line – subdividing the array into columns/ rows, banks and local blocks.
- Configurable mux factor sets column length and overall aspect ratio
- Bit Line Voltage control eliminates potential low operating voltages issues
Ultra Low Voltage Embedded SRAM - TSMC 22ULL
- Single port, single voltage rail synchronous SRAM
- Hierarchical Bit Line Architecture – sub-diving the array into columns/rows, banks and local blocks
- ‘Smart Assist’ – controls voltage drive to selected bit cells and bit lines in read and write cycles
- Pre-charge mux sense – read circuit that helps reduce both active and leakage power in the memory array
Ultra Low Power Embedded SRAM - TSMC 28HPC+
- Single port, single voltage rail synchronous SRAM
- Hierarchical Bit Line – subdividing the array into columns/ rows, banks and local blocks.
- Configurable mux factor sets column length and overall aspect ratio
- Bit Line Voltage control eliminates potential low operating voltages issues
Ultra Low Voltage Embedded SRAM - TSMC 28HPC+
- Single port, single voltage rail synchronous SRAM
- Hierarchical Bit Line Architecture – sub-diving the array into columns/rows, banks and local blocks
- ‘Smart Assist’ – controls voltage drive to selected bit cells and bit lines in read and write cycles
- Pre-charge mux sense – read circuit that helps reduce both active and leakage power in the memory array
Ultra Low Voltage Embedded SRAM - TSMC 40ULP
- Single port, single voltage rail synchronous SRAM
- Hierarchical Bit Line Architecture – sub-diving the array into columns/rows, banks and local blocks
- ‘Smart Assist’ – controls voltage drive to selected bit cells and bit lines in read and write cycles
- Pre-charge mux sense – read circuit that helps reduce both active and leakage power in the memory array
eTCAM (Embedded Ternary Content Addressable Memory IP
- One cycle operation latency (without priority encoder)
- Valid Bit per entry to reduce power
- Valid Bit reset in one cycle support
- Mask input option for bit-write and masked search key
eTCAM (Embedded Ternary Content Addressable Memory IP
- One cycle operation latency (without priority encoder)
- Valid Bit per entry to reduce power
- Valid Bit reset in one cycle support
Tuneable multi-port register file architecture - TSMC 16FFC
Tuneable multi-port register file architecture - TSMC 22ULL
- Custom Register File Architecture
- Power savings >50%
- Wide operating voltage range
- Tuneable performance: Ultra Low Voltage, High speed operation
- Single rail – interfaces directly to logic
- Supports multiple read/write ports
TSMC CLN16FFC Ultra High Density One Port Register File
- The Ultra High Density One Port Register File operates within voltage range from 0.72 V to 0.88 V and junction temperature range from -40 °C to 125 °C. The available supported macro size is configurable from 128 bits to 72K bits. The Compiler is divided into 3 groups according to their column selection numbers (Mux=1, 2 or 4).
- Pins and metal layers
- 1P4M (2Xa1Xd_h): 4 metal layers used and top metal is MXd.
- Power mesh supported with M4 pins