LNA is consists of two bipolar amplifier stages. The block used correction circuit for extension frequency range. Amplifier output based on common collector circuit for low output impedance. Built-in bias circuit has temperature compensation and bias level control for optimal stages functioning. Internal amplifier supply filter provides supply noise suppression.
The block is designed on iHP SiGe BiCMOS 130 nm technology.
Low-noise amplifier
Overview
Key Features
- iHP SiGe BiCMOS 130 nm
- Operating frequency range 3…5 GHz
- High gain (19.75 dB)
- Low noise figure (2.387 dB)
- High linearity
- Gain temperature compensation mode
- Build-in reference current source
- Internal matching network
- Small area
- Portable to other technologies (upon request)
Applications
- Front-end RF signal amplification in receivers
Deliverables
- Schematic or NetList
- Abstract model (.lef and .lib files)
- Layout view (optional)
- Behavioral model (Verilog)
- Extracted view (optional)
- GDSII
- DRC, LVS, antenna report
- Test bench with saved configurations (optional)
- Documentation
Technical Specifications
Foundry, Node
iHP SiGe BiCMOS 130 nm
Maturity
silicon proven
Availability
Now