FD-SOI: Samsung Opens the Kimono a Little
Last week there was a meeting of the GSA Analog/Mixed-Signal (AMS) working group. It was completely focused on FD-SOI (I hate that name, especially since FinFET is also fully-depleted. I vote for BoxFETs.) It was a bases loaded meeting with presentations from ST Microelectronics (calling in from France close to midnight), Samsung and GlobalFoundries. That is 3 for 3 of companies that have announced FD-SOI manufacturing.
Here's the situation. ST got FD-SOI to the commercial manufacturing stage at 28nm. Others, notably IBM, did research in the area (IBM uses partially depleted SOI for its high-end servers, now manufactured by GlobalFoundries, which acquired IBM's semiconductor business). Samsung announced that they were licensing ST's process. However, until yesterday, I had not heard much about what the true status was.
To read the full article, click here
Related Semiconductor IP
- UCIe D2D Adapter & PHY Integrated IP
- Low Dropout (LDO) Regulator
- 16-Bit xSPI PSRAM PHY
- MIPI CSI-2 CSE2 Security Module
- ASIL B Compliant MIPI CSI-2 CSE2 Security Module
Related Blogs
- 28nm FD-SOI: Samsung & ST's Major Opportunity
- STM FD-SOI Manufacturing Double Source: Samsung
- FD-SOI at Samsung
- TSMC versus SAMSUNG
Latest Blogs
- Ensuring reliability in Advanced IC design
- A Closer Look at proteanTecs Health and Performance Management Solutions Portfolio
- Enabling Memory Choice for Modern AI Systems: Tenstorrent and Rambus Deliver Flexible, Power-Efficient Solutions
- Verification Sanity in Chiplets & Edge AI: Avoid the “Second Design” Trap
- Embedded Security explained: Cryptographic Hash Functions