来自Mobile Semiconductor增强型内存编译器显著提高了边缘人工智能设备的功耗
July 23, 2020 -- Mobile Semiconductor, a Seattle WA based company, today announced a new generation of Ultra Low Leakage (ULL) and Ultra Low Power (ULP) SRAM Memory Compilers that dramatically improve the performance to power ratio for Edge AI chips
Cameron Fisher, CEO and Founder of Mobile Semiconductor, said, “Drawing on the expertise we acquired developing our successful Compilers on GF’s 22FDX platform, we fully expect that these new generations of Ultra Low Leakage and Ultra Low Power Memory Compilers will meet and exceed our customer’s expectations in Edge AI.”
These new ULL and ULP Memory Compliers on GF’s 22FDX platform are unique in the industry and come with the same high-quality design and testing that customers have come to expect from Mobile Semiconductor. With leakage numbers in the nano-amp range, memory designed using Mobile Semiconductor’s compilers lead the industry.
The ULL and ULP Compilers improve the performance to power ration making them ideal for Edge AI and Machine Learning applications which are measured in tera-operations per watt (TOPS/WATT) and host new power modes giving the engineer maximum flexibility.
The graph above shows the relative power vs performance relationship between the ULP/ULL compilers optimized for Edge applications and the Ultra High Speed memory compiler which is optimized for cloud-based servers.
Fisher continued, “Mobile Semiconductor remains the leader in providing low power solutions and these compliers remove the roadblocks that engineers have struggled with in past designs. Almost every edge product developed for Edge AI, Machine Learning and IoT will have new and more stringent power demands placed on them. We believe that Mobile Semiconductor is meeting the low power needs of this market.”
About Mobile Semiconductor:
Mobile Semiconductor is headquartered Seattle, Washington with a design center in Williston, Vermont. The company develops SRAM, ROM and Register File compilers optimized for applications requiring ultra-low power, low leakage or ultra-high performance. Mobile Semiconductor’s customers differentiate their products by using our application-optimized SRAMs to meet their high performance and ultra-low power product requirements. For more information: http://www.mobile-semiconductor.com
Mobile Semiconductor is part of GLOBALFOUNDRIES’ FDXceleratorTM Partner Program and offers foundry sponsored compilers for 55nm and 28nm.
Related Semiconductor IP
- Memory (SRAM, DDR, NVM) encryption solution
- Global Foundries 55nm LowPower LowK Process synchronous high density low power dual port SRAM memory compiler.
- Global Foundries 55nm LowPower LowK Process synchronous high density low power dual port SRAM memory compiler.
- Global Foundries 55nm Low Power LowK Process synchronous high density low power single port SRAM memory compiler.
- Global Foundries 55nm Low Power LowK Process synchronous high density low power single port SRAM memory compiler.
Related News
- Mobile Semiconductor的 22FDX 寄存器文件内存编译器荣获格芯(Globalfoundries)白金等级认证
- Mobile Semiconductor的22nm ULL内存编译器加入GLOBALFOUNDRIES FDXcelerator合作伙伴计划
- Nordic Semiconductor 将收购美国存储专家 Mobile Semiconductor
- M31 円星科技开发多元化TSMC 28HPC + ULL Memory Compiler产品组合提供客户更具弹性的SoC设计架构