Samsung 8nm IP
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23
IP
from 5 vendors
(1
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10)
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16b 80Msps DAC with 10KHz BW in samsung 8nm
- Technology: Samsung 8nm LPP process
- Metal Scheme:11M_3Mx_6Dx_1Gx_1Iz_LB
- Programmable Gain
- Programmable Offset
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12b, 2Gsps, Self-Calibrating Current Steering IQDAC in samsung 8nm for 5G & WIFI6
- Technology: Samsung 8nm LPP process
- Metal Scheme: 11M_3Mx_6Dx_1Gx_1Iz_LB
- 12b Resolution, Fs = 2Gsps
- Programmable 20mA Differential Current source
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Dual channel 12-bit, 2GS/s ADC for 5G & WIFI6 in Samsung 8nm
- Technology: Samsung 8nm LPP process
- Metal Scheme:11M_3Mx_6Dx_1Gx_1Iz_LB
- Dual channel 12-bit, 2GS/s Analog-to-Digital Converter
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14b, 4Gsps, Self-Calibrating Current Steering IQ DAC for 5G & WIFI6 in samsung 8nm
- Samsung 8nm LPP process
- Metal Scheme: 1p8m_5x2z
- 14b Resolution, Fs = 4Gsps
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12b, 1Gsps, Self-Calibrating Current Steering IQDAC in samsung 8nm for 5G & WIFI6
- • Technology: Samsung 8nm LPP process
- • Metal Scheme:
- 11M_3Mx_6Dx_1Gx_1Iz_LB
- • 12b Resolution, Fs = 1Gsps
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Dual channel 12-bit, 1GS/s ADC in Samsung 8nm for 5G & WIFI6
- • Technology: Samsung 8nm LPP process
- • Metal Scheme:11M_3Mx_6Dx_1Gx_1Iz_LB
- • Dual channel 12-bit, 1GS/s Analog-to-Digital Converter
- • Differential analog input
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Temperature Sensor, +/-3C Accuracy without Trimming - Samsung 8nm
- Temperature Sensor, +/-3C Accuracy without Trimming;
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MIPI D-PHY v1.2 TX 4 Lanes in Samsung (8nm)
- Compliant with the MIPI D-PHY specification
- Fully verified hard macro
- Up to 2.5 Gb/s per lane
- Aggregate throughput up to 10 Gb/s in 4 data lanes
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MIPI D-PHY v1.2 RX 2 Lanes in Samsung (8nm)
- Compliant with the MIPI D-PHY specification
- Fully verified hard macro
- Up to 2.5 Gb/s per lane
- Aggregate throughput up to 10 Gb/s in 4 data lanes