In-Chip Monitoring IP
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72
IP
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10)
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In-Chip Monitoring Subsystem for Process, Voltage & Temperature (PVT) Monitoring, TSMC N7
- PVT Subsystem supporting a configurable monitoring fabric
- Measurement of dynamic and static conditions in-chip
- Thermal profiling of silicon devices
- Supply voltage analysis during device ‘mission’ mode
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In-Chip Monitoring Subsystem for Process, Voltage & Temperature (PVT) Monitoring, TSMC N3E
- PVT Subsystem supporting a configurable monitoring fabric
- Measurement of dynamic and static conditions in-chip
- Thermal profiling of silicon devices
- Supply voltage analysis during device ‘mission’ mode
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In-Chip Monitoring Subsystem for Process, Voltage & Temperature (PVT) Monitoring, TSMC N4P
- PVT Subsystem supporting a configurable monitoring fabric
- Measurement of dynamic and static conditions in-chip
- Thermal profiling of silicon devices
- Supply voltage analysis during device ‘mission’ mode
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In-Chip Monitoring Subsystem for Process, Voltage & Temperature (PVT) Monitoring, TSMC N6
- PVT Subsystem supporting a configurable monitoring fabric
- Measurement of dynamic and static conditions in-chip
- Thermal profiling of silicon devices
- Supply voltage analysis during device ‘mission’ mode
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In-Chip Monitoring Subsystem for Process, Voltage & Temperature (PVT) Monitoring, TSMC N5
- PVT Subsystem supporting a configurable monitoring fabric
- Measurement of dynamic and static conditions in-chip
- Thermal profiling of silicon devices
- Supply voltage analysis during device ‘mission’ mode
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In-Chip Monitoring Subsystem for Process, Voltage & Temperature (PVT) Monitoring, TSMC 12FFC
- PVT Subsystem supporting a configurable monitoring fabric
- Measurement of dynamic and static conditions in-chip
- Thermal profiling of silicon devices
- Supply voltage analysis during device ‘mission’ mode
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In-Chip Monitoring Subsystem for Process, Voltage & Temperature (PVT) Monitoring, TSMC N3
- PVT Subsystem supporting a configurable monitoring fabric
- Measurement of dynamic and static conditions in-chip
- Thermal profiling of silicon devices
- Supply voltage analysis during device ‘mission’ mode
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In-Chip Monitoring Subsystem for Process, Voltage & Temperature (PVT) Monitoring, TSMC 28HPC+
- PVT Subsystem supporting a configurable monitoring fabric
- Measurement of dynamic and static conditions in-chip
- Thermal profiling of silicon devices
- Supply voltage analysis during device ‘mission’ mode
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In-Chip Monitoring Subsystem for Process, Voltage & Temperature (PVT) Monitoring, TSMC 16FFC
- PVT Subsystem supporting a configurable monitoring fabric
- Measurement of dynamic and static conditions in-chip
- Thermal profiling of silicon devices
- Supply voltage analysis during device ‘mission’ mode
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PVT Controller (Series 5) (Sub-system for complete PVT monitoring), TSMC N3E
- Monitor multiple instances of Process Monitors, Voltage Monitors & Temperature Sensors
- Temperature & Voltage Alarms / Hard Stops
- PVT Statistics (max min sample values, sample counters)
- Clock synth