I/O Library IP for Samsung
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I/O Library IP
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9
I/O Library IP
for Samsung
from 3 vendors
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9)
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1.8V general purpose I/O for 4nm FinFET
- Enable higher voltage operation, beyond the foundry IO levels
- Easily replace existing I/O cells
- Integrated scalable ESD protection
- Bias circuit can be shared with multiple I/Os
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3.3V general purpose I/O for 28nm CMOS
- Enable higher voltage operation, beyond the foundry IO levels
- Easily replace existing I/O cells
- Integrated scalable ESD protection
- Bias circuit can be shared with multiple I/Os
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Four Channel (4CH) LVDS Serializer in Samsung 28FDSOI
- 25-165 MHz clock support
- Up to 1250 Mbps bandwidth/channel
- Up to 5.0 Gbps data throughput
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High voltage tolerant I/O
- Scalable robustness
- Area efficient
- low capacitance option
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Analog I/O - low capacitance, low leakage
- Scalable robustness
- Area efficient
- low capacitance option
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on-chip ESD protection
- Analog I/Os
- ESD Power protection
- Ground pads
- ESD protection cells
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On-chip protection against IEC61000-4-2 events
- Analog Pads
- Power Pads
- Ground Pads
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I/O LIbrary
- Schmitt triggered input
- pull up/down control modes
- Slew rate controled output
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3.3V Wide-Range General Purpose I/O Pad Set
- Multi-Voltage (1.8V, 2.5V, 3.3V)
- LVCMOS / LVTTL input with selectable hysteresis
- Programmable drive strength (rated 2mA to 12mA)
- Selectable output slew rate