I/O Library IP for Samsung

Compare 13 I/O Library IP for Samsung from 5 vendors (1 - 10)

1.8V general purpose I/O for 4nm FinFET
- Enable higher voltage operation, beyond the foundry IO levels
- Easily replace existing I/O cells
- Integrated scalable ESD protection
- Bias circuit can be shared with multiple I/Os
3.3V general purpose I/O for 28nm CMOS
- Enable higher voltage operation, beyond the foundry IO levels
- Easily replace existing I/O cells
- Integrated scalable ESD protection
- Bias circuit can be shared with multiple I/Os
Four Channel (4CH) LVDS Serializer in Samsung 28FDSOI
- 25-165 MHz clock support
- Up to 1250 Mbps bandwidth/channel
- Up to 5.0 Gbps data throughput
High voltage tolerant I/O
- Scalable robustness
- Area efficient
- low capacitance option
Analog I/O - low capacitance, low leakage
- Scalable robustness
- Area efficient
- low capacitance option
on-chip ESD protection
- Analog I/Os
- ESD Power protection
- Ground pads
- ESD protection cells
On-chip protection against IEC61000-4-2 events
- Analog Pads
- Power Pads
- Ground Pads
I/O LIbrary
- Schmitt triggered input
- pull up/down control modes
- Slew rate controled output
Samsung 28nm FDSOI 1.8v/1.0v LVDS Transmitter
- Process: Samsung 28nm FDSOI process
- Supply voltage: 2.25V<=VDD25<=2.75V, 0.9V<=VDD10<=1.1V 1.62V<=VDD18<=1.98v
- Mos device: pfet, nfet, egpfet, egnfet, rpposab
- Operating current:VDD25<24mA
LVDS Driver/Buffer
- Available as LVDS driver and buffer configurations
- SLVS solutions
- Combo LVDS + GPIO solutions
- Available in Samsung 28FDS, 14LPP, 11LPP, 10LPP, 8LPP, 5LPP, 4LPPn