I/O Library IP for Samsung

Compare 7 I/O Library IP for Samsung from 5 vendors (1 - 7)

1.8V/3.3V Switchable GPIO with 5V I2C Open Drain and Analog Cells in Samsung 11nm
- A Samsung 11nm Flip-Chip I/O library with dynamically switchable 1.8V/3.3V GPIO with fail-safe capability, 5V I2C / SMBus open-drain cell, 5V OTP cell, 1.8V 3.3V analog cells, and associated ESD.
- A key attribute of this library is its ability to detect and dynamically adjust to a VDDIO supply of 1.8V or 3.3V during system operation.
- The GPIO cell can be configured as input, output, open source, or open drain with an optional internal 50K ohm pull up or pull down resistor.
Four Channel (4CH) LVDS Serializer in Samsung 28FDSOI
- 25-165 MHz clock support
- Up to 1250 Mbps bandwidth/channel
- Up to 5.0 Gbps data throughput
Samsung 28nm FDSOI 1.8v/1.0v LVDS Transmitter
- Process: Samsung 28nm FDSOI process
- Supply voltage: 2.25V<=VDD25<=2.75V, 0.9V<=VDD10<=1.1V 1.62V<=VDD18<=1.98v
- Mos device: pfet, nfet, egpfet, egnfet, rpposab
- Operating current:VDD25<24mA
LVDS Driver/Buffer
- Available as LVDS driver and buffer configurations
- SLVS solutions
- Combo LVDS + GPIO solutions
- Available in Samsung 28FDS, 14LPP, 11LPP, 10LPP, 8LPP, 5LPP, 4LPPn
LVDS Receiver
- 175Mbps to 1120Mbps
- 25MHz to 160MHz
- BIST support
- Open/short detection
LVDS Transmitter
- 56Mbps to 1120Mbps
- 8MHz to 160MHz
- BIST support
- Open/short detection
3.3V Wide-Range General Purpose I/O Pad Set
- Multi-Voltage (1.8V, 2.5V, 3.3V)
- LVCMOS / LVTTL input with selectable hysteresis
- Programmable drive strength (rated 2mA to 12mA)
- Selectable output slew rate