LPDDR/mDDR IP for Samsung
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High Bandwidth Memory 3 (HBM3/3E) IP optimized for Samsung SF4X
- The HBM3 IP consists of a PHY and memory controller optimized for Samsung SF4X process to support the HBM3 memory standard (JESD238A) operating at up to 9.6 Gbps/pin.
- The HBM3 IP is designed for high memory throughput and low latency applications while minimizing area and power consumption.
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HBM2E/HBM2 PHY
- Advanced clocking architecture minimizes clock jitter
- DFI PHY Independent Mode for initialization and training
- IEEE 1500 interface, Memory BIST feature, and loop-back function
- Designed for optimized interposer routing
- Pin programmable support for lane repair
