TSMC 65GP 2Gb/s bidirectional LVDS IO cell
Overview
The LSB25R/Z cell is a high-speed and low-power LVDS bidirectional transceiver IO cell powered at 2.5V/1.0V or 1.8V/1.0V, designed on the TSMC 65 GP technology.
Key Features
- TSMC 65 GP
- 2.5V/1.0V IO/Core transistors
- Fully compliant with TIA/EIA-644-A-2001
- Built-in, low parasitic ESD protection
- Easily integrates with TSMC I/O library cells
- All-in-ring® topology, so no core silicon area is used by LVDS
- The same cells operate with 2.5V/1.0V or 1.8V/1.0V power supplies
- Adjustable output common mode voltage (LVDS or SubLVDS mode)
- Adjustable driving current for buses with single or double termination
- Standby/power down mode
- Internal bias voltage generation and bias current distribution circuitry
- Selectable on-chip termination resistor, with optional user tuning
- Digital loopback functions to ease ATE testing
- Up to 2 Gbps data rate
Applications
- Multi-purpose reconfigurable IO
- Point-to-point, point-to-multipoint or bus-based IC highspeed data communications
- Intra-package (e.g. MCM or SIP) inter-die high-speed data communications
- Backplane high-speed data communications
- High-speed serial communications (HDMI, SATA, PCIeX, etc.)
- Communication to LCD/OLED screens
- Video sensor digital data interface
Deliverables
- GDS II layouts
- LEF abstracts
- CDL netlists
- Liberty timings
- Verilog description
- A full datasheet
- An integration note
Technical Specifications
Foundry, Node
TSMC 65 GP
Maturity
Silicon proven
TSMC
Silicon Proven:
65nm
GP
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