Nano power DC-DC converter in GF 22FDX with ultra-low quiescent current and high efficiency at light load

Overview

Nano power DC-DC converter in GF 22FDX with ultra-low quiescent current and high efficiency at light load

Key Features

  • "Ultra-low quiescent current (300 nA) to ensure minimum current consumption in deep sleep / hibernation mode
  • High efficiency at light load to extend battery lifetime (75% @ 10 uA)
  • Low ripple value to supply noise sensitive and RF loads
  • 1 uH inductor
  • Ultra-small area for reduced silicon cost
  • Configurable output current (depending on application requirements)"

Technical Specifications

Foundry, Node
GlobalFoundries 22nm FDX
Maturity
Pre-silicon
GLOBALFOUNDRIES
Pre-Silicon: 22nm FDX
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Semiconductor IP