GLOBALFOUNDRIES 40nm LP 3.3V-2.5/1.1V Power Regulator

Overview

This IP is a Low-Dropout (LDO) 3.3V to 2.5V and/or 1.1V power regulator in GLOBALFOUNDRIES
40nm LP 1.1V/2.5V process. When it works in regulation region, the max rated output currents are both
60mA and the current limits are both about 120mA. When it works in dropout region, the typical dropout
voltage is 150mV @IOUT25=60mA for 2.5V output.

Key Features

  • Process: GLOBALFOUNDRIES 40nm 1.1V/2.5V (chrt40lp)
  • Input voltage: 2.25~3.6V
  • Regulated output voltage: VOUT25=2.5V±10% & VOUT12=1.1V±10%
  • Dropout voltage: VOUT25(DROP)= 150mV (when IOUT25=60mA, AVDD=2.25V)
  • Stable with zero ESR output cap
  • Output current: 0~60mA
  • Current limit: IOUT25(max)=120mA (when VOUT25=2.5V) & IOUT11(max)=120mA (when VOUT11=1.1V)
  • Standby current: typical 73uA (maximum 95uA)
  • Operating junction temperature: -40°C≤TJ≤+125°C

Technical Specifications

Foundry, Node
GLOBALFOUNDRIES 40nm
Maturity
Pre-Silicon
GLOBALFOUNDRIES
Pre-Silicon: 40nm LP
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Semiconductor IP