Fully-integrated low-power mesh sensor protecting against enclosure tampering

Overview

Key Features

• fully-integrated low-power mesh sensor
• 16 multiplexed impedance sensing inputs (customized on request)
• 2 latched alarms signals per sensing input: low detection threshold; high detection threshold
• 16 multiplexed alarm output pairs
• alarm flag test inputs
• power supply voltage range: nominal core voltage ±10%
• operating junction temperature range: -40°C to 125°C
• electrical characteristics of a 65 nm CMOS implementation: startup delay shorter than 60 µs; detection time faster than 100 µs; typical operating current lower than 4 µA; silicon area smaller than 0.1 mm²
• silicon proven in a 65 nm CMOS process

Benefits

• Timely detection
• Small area
• Low power
• Quick start-up
• Silicon proven

Deliverables

• GDSII stream and layer map file
• Library Exchange Format (LEF) file
• Circuit Description Language (CDL) netlist
• Liberty Timing File (.lib)
• VHDL behavioral model
• design specification

Technical Specifications