Driver Amplifier operating from 24-30 GHz and can be used in wide band application or to drive the high-power amplifier

Overview

RFDA06C Driver Amplifier operates from 24 – 30 GHz and can be used in Ka band application or to drive the high-power amplifier. The amplifier provides of 24.9 dBm Output P1dB. The input and output are matched to 50 ohms with on-chip DC blocking capacitors. The device is specifically designed to use in point-to-point radios for cellular backhaul Application, 5G RF Transceiver & SATCOM. The technology used to design DA is 0.1um GaAs pHEMT process. Results are shown in datasheet with all parasitics & coupling effects at desired frequency.

Key Features

RF Frequency: 24-30 GHz
Gain of 13.6 dB
Output P1dB of 24.9 dBm
Noise Figure of 3 dB
OIP3 is 35.9 dBm
Output Saturated Power: 27.4 dBm
Bias: VDD1=VDD2=4V, VGG1= VGG2= -0.5V,
ID= 270.6mA
Die size: 1.15 mm x 1.54 mm
This IP is similar in performance with Analog Devices HMC499

Benefits

High output power
Flat gain over band
Low noise figure
Can be used for front-end module
Low cost
Porting: IP can be ported to 65nm Si / CMOS node

Block Diagram

Applications

5G mobile system
Satellite Communication
Point to point communication system
Backhaul application
IoT

Deliverables

Schematic and Net List
Abstract Model (.lib file)
Layout View (Optional)
Behavioral Model (Circuit & EM Simulation)
Extracted View (Optional)
GDSII
DRC, LVS, Antenna report
Test bench with saved configuration (Optional)
Documentation

Technical Specifications

Foundry, Node

Win Semiconductor, 100 nm GaAs pHEMT process

Maturity

IC design and layout is complete, to be fabricated soon

Availability

Now

Request Info