Buffer Amplifier operating from 10-45 GHz and can be used in wide band application or to drive the high power amplifier

Overview

RFBA02C Buffer Amplifier operates from 10-45 GHz and can be used in wide band application or to drive the high power amplifier. The amplifier provides 13.2 dB small signal gain and 10 dBm of Output P1dB. The input and output are matched to 50 ohms with on-chip DC blocking capacitors. The device is specifically designed to use in point-to-point radios for cellular backhaul Application, 5G RF Transceiver & SATCOM. The technology used to design DA is 0.1um GaAs pHEMT Process. Results are shown in datasheet with all parasitics & coupling effects at desired frequency.

Key Features

RF Frequency 10-45 GHz
Gain of 13.2 dB
Output P1dB of 10 dBm
Noise Figure of 6.5 dB
OIP3 is 19.8 dBm
Output Saturated Power: 15.7 dBm
Bias: VDD1=VDD2=VDD3 = 4V,
VGG1=VGG2=VGG3= -0.5V, ID=100.6 mA
Die size: 1.15 mm x 2.15 mm

Benefits

Flat gain over band
Low current
Low noise figure
50 ohm input and output match
Low cost
Porting: IP can be ported to 65nm Si / CMOS node

Block Diagram

Applications

5G mobile system
Satellite Communication
Point to point communication system
Backhaul Application
IoT

Deliverables

Schematic and Netlist
Abstract Model (.lib file)
Layout View(Optional)
Behavioral model (Circuit & EM simulation)
Extracted View(Optional)
GDSII
DRC, LVS, Antenna report
Test bench with saved configuration(Optional)
Documentation

Technical Specifications

Foundry, Node

Win Semiconductor, 100 nm GaAs pHEMT process

Maturity

IC design and layout is complete, to be fabricated soon

Availability

Now

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