Driver Amplifier operating from 37 - 40 GHz and can be used in Ka band applications or to drive the high-power amplifier.

Overview

RFDA11C Driver Amplifier operates from 37 - 40 GHz and can be used in Ka band applications or to drive the high-power amplifier. The amplifier provides 15 dB small signal gain and 22 dBm of Output P1dB. The input and output are matched to 50 ohms with on-chip DC blocking capacitors. The device is specifically designed to use in point-to-point radios, cellular backhaul application, 5G RF Transceiver & SATCOM. The technology used to design DA is 0.1um GaAs pHEMT Process. Results are shown in datasheet with all parasitics & coupling effects at desired frequency.

Key Features

RF Frequency: 37-40 GHz
Gain of 15 dB
Output P1dB of 22 dBm
Noise Figure of 4.3 dB
OIP3 is 29 dBm
Output Saturated Power: 24.4 dBm
Bias: VDD1= 4V, VGG1=-0.5V, ID= 235mA
Die Size: 1.15 mm x 1.95 mm
This IP is similar in performance with MACOM's XB1014-QT

Benefits

High power
Flat gain over band
50 ohm input and output match
Low noise figure
Low cost
IP can be ported to 65nm Si / CMOS node

Block Diagram

Applications

Satellite internet access
Geostationary orbit communications
IoT

Deliverables

Schematic and Netlist
Abstract Model (.lib file)
Layout View(Optional)
Behavioral model (Circuit & EM simulation)
Extracted View (Optional)
GDSII
DRC, LVS, Antenna report
Test bench with saved configuration (Optional)
Documentation

Technical Specifications

Foundry, Node

Win Semiconductor, 100 nm GaAs pHEMT process

Maturity

IC is fabricated and tested.

Availability

Now

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