Raaam signs lead licensee for SRAM replacement technology
By Peter Clarke, eeNews Europe (July 23, 2024)
Memory IP licensing startup Raaam Memory Technologies Ltd. (Petah Tikva, Israel) has signed a major fabless chip company as its lead partner to help it develop an alternative to static RAM.
Raaam calls the technology Gain-Cell Random Access Memory (GCRAM) and claims it can provide a 50 percent area saving versus SRAM and consume 10 percent of the power of SRAM.
To read the full article, click here
Related Semiconductor IP
- HBM4 PHY IP
- Ultra-Low-Power LPDDR3/LPDDR2/DDR3L Combo Subsystem
- MIPI D-PHY and FPD-Link (LVDS) Combinational Transmitter for TSMC 22nm ULP
- HBM4 Controller IP
- IPSEC AES-256-GCM (Standalone IPsec)
Related News
- Argon Design signs up first licensee for Argon360 real-time video stitching IP
- Agile Analog signs first Chinese licensee for its analog IP
- JFE Shoji Electronics Signs Sales Agent Agreement with Andes Technology
- GlobalFoundries and Egis Partner to Develop Next-Generation Smart Sensing Technology for Mobile and IoT Applications
Latest News
- Weebit Nano secures a license agreement with Texas Instruments
- Digital Blocks DB9000 Display Controller IP Core Family Extends Leadership in 8K, Automotive, Medical, Aerospace, and Industrial SoC Designs
- AI Directs UFS Advancement
- Qualitas Semiconductor Expands Automotive Momentum with 5nm IP Bundle Agreement
- Cyient Semiconductors Acquires Majority Stake in Kinetic Technologies to Drive Custom Power IC Leadership for Edge AI and High-Performance Compute Markets