The ODT-AFE-4T4R-12 is an ultra-high-performance Swift™ AFE designed in a 12nm CMOS process. The AFE includes 2 IQ Pairs of Tx and Rx for the FR2 band, and combines them with 2 additional IQ Pairs of Tx and Rx for the FR1 band clocked at a lower sample rate. This is comprised of eight 12-bit 2GSPS ADCs, and 8 12-bit 2GSPS DACs for 4 total IQ pairs for Tx and Rx. This AFE also includes multiple capless LDOs, a voltage/current reference, and a low jitter 2 GHz PLL from a 3rd party supplier. The ADC and DAC architecture is optimized to maximize performance while minimizing power and area consumption. To maximize SNR, the AFE includes an ultra-low-jitter clock distribution network
Ultra-high-performance AFE that includes 4 total IQ pairs for Tx and Rx
Overview
Key Features
- Ultra high-performance AFE
- FR1/FR2- I/Q ADCs 12-bit 2GSPS
- FR1/FR2 – I/Q DAC 12-bit 2GSPS
- Capless LDOs
- Voltage/current reference
- Low jitter 2 GHz PLL
- Integrated ESD and bumps
Benefits
- High Performance Low Power, Low Area
Applications
- General purpose software defined radio
- High speed data acquisition systems
- Cellular base station
- Broadband communications
- High-speed medical imaging
- Wideband satellite receiver
Deliverables
- Datasheet
- Hard Macro (GDSII)
- Characterization Report (as applicable)
- Abstract View (LEF) for top level connectivity
- Integration and Customer Support
Technical Specifications
Foundry, Node
12nm
Maturity
In Development
Availability
Contact Vendor
TSMC
Pre-Silicon:
12nm
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