The Impulse TSMC .13u ESD diode was made to provide ESD discharge paths when integrating third party IP in an integrated circuit design for total ESD protection. The Impulse ESD diode has been successfully used with Dolphin Technologies, Artisan/ARM, TriCN/Synopsis I/O libraries, as well as popular IP blocks from RAMBUS, Chip Idea and other quality IP vendors. A 5.5 volt reverse bias anode to cathode operational specification enables the Impulse TSMC .13u ESD diode to be the device of choice for 5 volt tolerant designs.
Stand alone ESD diode for TSMC .13u Foundry Process
Overview
Key Features
- This robust, silicon-proven ESD diode is available in TSMC .13u G or LV process. The ESD diode has a low dynamic resistance under ESD conditions, low capacitance, and is scaleable to any application with an operating voltage of 5.5 volts and absolute maximum voltage of 6 volts.
Benefits
- The Impulse ESD diode has been successfully used with Dolphin Technologies, Artisan/ARM, TriCN/Synopsis I/O libraries, as well as popular IP blocks from RAMBUS, Chip Idea and other quality IP vendors.
Deliverables
- GDSII file, LVS netlist
Technical Specifications
Foundry, Node
TSMC .13u
Availability
Now
TSMC
In Production:
130nm
LV
Pre-Silicon: 130nm LV
Silicon Proven: 130nm LV
Pre-Silicon: 130nm LV
Silicon Proven: 130nm LV
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