SMIC 0.18um Low Leakage Process

Overview

SMIC18LL_VDD33SW_01, a 3.3V switchable power control block also called 3.3V power bypass control
block, is developed by VeriSilicon and has been optimized for Semiconductor Manufacturing
International Corporation (SMIC) 0.18¦Ìm low leakage 1.8/3.3V Logic 1P4M Salicide process. This block
includes a 3.3V input and a 3.3V output with one bypass enable control pin (1.8V signal, high true). It can
provide a maximum 100mA output driving current.

Key Features

  • Process: SMIC 0.18um low leakage 1.8V/3.3V 1P4M logic process
  • Input voltage: 3.0v~3.6v
  • Output voltage: VIN-0.15~VIN when the supply voltage VIN is between 3.0V~3.6V
  • Maximum output current: 100mA
  • IO type: two inline bonding pads, one for 3.3V input and the other for 3.3V output
  • Cell area: 184um *253um
  • Operating temperature: -40¡ãC~+25¡ãC~+125¡ãC
  • Robust ESD performance: HBM-2KV and MM-200V
  • Other: Easy interface with VeriSilicon SMIC 0.18um process standard I/O libraries

Technical Specifications

Foundry, Node
SMIC 0.18um
Maturity
GDS Ready
Availability
Now
SMIC
Pre-Silicon: 180nm EEPROM , 180nm G , 180nm LL
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Semiconductor IP