Single stage low noise amplifier from 2-6 GHz with flat gain, low Noise Figure, high isolation, stability.
Overview
RFLN04C is a single stage low noise amplifier with flat gain, low Noise Figure, high isolation, stability. The LNA is designed to operate from 2-6 GHz using 0.1um GaAs pHEMT process. The designed LNA, bias current and gain can be set with the gate bias to allow the user to customize the current, gain and NF value to fit the application. The LNA offers less than 1.4 dB noise figure, 14.6 dB of small signal gain, OP1dB of 18.8 dBm with low noise figure along with the flexibility of setting current and gain makes this LNA an ideal front end amplifier in Bluetooth, Zigbee and SATCOM Application. Results are shown in datasheet with all parasitics & coupling effects at desired frequency.
Key Features
- RF Frequency: 2-6 GHz
- Noise Figure of 1.4 dB
- Small Signal Gain of 14.6 dB
- OP1dB of 18.8 dBm
- OIP3 of 30.6 dBm
- Biasing: VDD=4V, VGG =-0.65V,
- ID= 116 mA
- Die size: 1.15 mm x 1.1 mm
Benefits
- Low noise figure
- Low current
- Flat gain over band
- Good input and output VSWR’s
- Low cost
- IP can be ported to 65nm Si/CMOS node
Block Diagram
Applications
- Wi-Fi 6
- 5G mobile system
- Bluetooth
- Zigbee
- SATCOM
- IoT
Deliverables
- Schematic and Net List
- Abstract Model (.lib file)
- Layout View (Optional)
- Behavioral Model (Circuit & EM Simulation)
- Extracted View (Optional)
- GDSII
- DRC, LVS, Antenna report
- Test bench with saved configuration (Optional)
- Documentation
Technical Specifications
Foundry, Node
Win Semiconductor, 100 nm GaAs pHEMT process
Maturity
IC design and layout is complete, to be fabricated soon
Availability
Now