Single stage low noise amplifier from 2-6 GHz with flat gain, low Noise Figure, high isolation, stability.

Overview

RFLN04C is a single stage low noise amplifier with flat gain, low Noise Figure, high isolation, stability. The LNA is designed to operate from 2-6 GHz using 0.1um GaAs pHEMT process. The designed LNA, bias current and gain can be set with the gate bias to allow the user to customize the current, gain and NF value to fit the application. The LNA offers less than 1.4 dB noise figure, 14.6 dB of small signal gain, OP1dB of 18.8 dBm with low noise figure along with the flexibility of setting current and gain makes this LNA an ideal front end amplifier in Bluetooth, Zigbee and SATCOM Application. Results are shown in datasheet with all parasitics & coupling effects at desired frequency.

Key Features

RF Frequency: 2-6 GHz
Noise Figure of 1.4 dB
Small Signal Gain of 14.6 dB
OP1dB of 18.8 dBm
OIP3 of 30.6 dBm
Biasing: VDD=4V, VGG =-0.65V,
ID= 116 mA
Die size: 1.15 mm x 1.1 mm

Benefits

Low noise figure
Low current
Flat gain over band
Good input and output VSWR’s
Low cost
IP can be ported to 65nm Si/CMOS node

Block Diagram

Applications

Wi-Fi 6
5G mobile system
Bluetooth
Zigbee
SATCOM
IoT

Deliverables

Schematic and Net List
Abstract Model (.lib file)
Layout View (Optional)
Behavioral Model (Circuit & EM Simulation)
Extracted View (Optional)
GDSII
DRC, LVS, Antenna report
Test bench with saved configuration (Optional)
Documentation

Technical Specifications

Foundry, Node

Win Semiconductor, 100 nm GaAs pHEMT process

Maturity

IC design and layout is complete, to be fabricated soon

Availability

Now

Request Info