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Simulation VIP for HBM3

Overview

First to market with multiple early adopters of production designs.

This Cadence® Verification IP (VIP) provides support for the High-Bandwidth Memory (HBM3) interface. It provides a highly capable compliance verification solution applicable to IP, system-on-chip (SoC), and system-level verification. The Cadence Memory Model for HBM3 models a single channel of HBM3 DRAM; this model can be replicated for multiple channels and stacks. The Memory Model for HBM3 runs on all leading simulators, and leverages the industry-standard Cadence Memory Model core architecture, interface, and use model.

The HBM3 DRAM standard is an industry-leading, low-power, double-data-rate, high-data-width, volatile (DRAM) device memory standard for storage of system code, software applications, and user data. The HBM3 DRAM Memory Device Standard is designed to satisfy the performance and memory density demands of the leading-edge high-performance devices.

Supported specification: JEDEC JESD235 Rev 1.27 (HBM), JESD235B Rev 2.50 (HBM2), JESD235B Rev 2.60 (HBM2E), latest HBM3 rev1.0 specification and newer revisions.

Key Features

  • Speed (MHz)
    • Clock: 1800MHz; data rate: 7.2Gbps/pin
  • Mode Registers
    • All 16 mode registers are supported
  • Addressing
    • All addressing schemes with pseudo channels are supported
    • Device density from 2Gb to 32Gb per channel is supported
    • Device configuration from 8Gb, 8 High to 32Gb 16 High are supported
  • HBM3 Functionality
    • Precharge, Activate, Read, Write, Mode Register Set, Power Down, Self Refresh, and all related timing checks
  • Clocking and Reset
    • Differential clock inputs (CK_t/CK_c) and Active Low Reset Line (reset_n)
  • Initialization
    • Supports initialization with all tINIT* timing checks with options to skip initialization
  • Trainings
    • Supports WDQS-to-CK alignment training
  • DCA, DCM
    • Supports Duty Cycle Monitor and Duty Cycle Adjuster operations
  • Read/Write
    • Supports new WDQS-based architecture with 2X WDQS speed for Read and Write
    • Preamble and Postamble are supported
    • WDQS timing parameters and differential clocks are checked
    • tCCD related checkers are implemented
    • Supports unmatched WDQS to DQ path parameter - tWDQS2DQ
    • Supports auto-precharge feature
  • Refresh
    • Supports Refresh, Refresh Management, and Adaptive Refresh Management
  • SID
    • The stack ID (SID) acts as a bank address bit during command execution
  • Command Spacing
    • Command spacing checks
  • Bank Groups
    • Timing associated with back-to-back accesses to the same and different bank group
  • Command, Data Parity
    • Supports Command/Address parity, Data parity, and related checks
  • Data Bus Inversion (DBI)
    • Supports Write/ Read data inversion
  • IEEE 1500 Functionality
    • Supports all IEEE 1500 instructions decoding
    • Supports functionalities of instructions, likes of Mode Register Dump Set, HBM_RESET, Device ID, Channe Disable, etc
  • Loopback Test Mode
    • Supports all modes of AWORD and DWORD MISR operations
  • Boundary Scan
    • Supports Extest TX/RX instructions to test I/O connectivity
  • Redundancy Remapping
    • Supports Soft/Hard lane repair of AWORD, DWORD
  • WDQS Internal Oscillator
    • Supports WOSC operation using its IEEE instructions
  • ECC Engine Test Mode
    • Supports ECC engine test mode of operation
  • Temperature Compensated Refresh
    • Supports refresh rate information on TEMP pin, also supports sticky CATTRIP pin

    Block Diagram

    Simulation VIP for HBM3 Block Diagram

    Technical Specifications

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