The RJP05 is 2.4 GHz to 2.5 GHz; high efficiency Power stage for WLAN Power Amplifier. The Amplifier is designed using 0.18um SiGe BiCMOS process for 802.11 b/g WLAN systems.
Power amplifier shows PAE of 31% at 24 dBm power with output match off-chip. It has been designed specially for WLAN application.
SiGe BiCMOS WLAN Power Amplifier
Overview
Key Features
- Linear Gain around 26 dB
- High PAE, High Linearity
- Maximum Linear Output Power in the range of 24dBm
Technical Specifications
Foundry, Node
0.18um SiGe BiCMOS process
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