Metal programmable ROM compiler - Memory optimized for low power and high density - Dual Voltage - compiler range up to 1024 k
Overview
Metal programmable ROM compiler - TSMC 180 nm G - Non volatile memory optimized for low power and high density - Dual Voltage - compiler range up to 1024 k
Key Features
- Ultra low dynamic power
- Decrease of packaging cost
- Smaller SoC area
- 45% less consuming than conventional metal or via ROM at nominal voltage
- Functionality down to 1.1 V +/-10%: 2.5 times less consuming compared to standard operation at 1.8 V
- Decrease of fabrication costs
- Metal 1 and Via metal 1-2 programmable ROM
- Compatible with 1P4M SoC
- Up to 20% denser than conventional metal or via ROM
- Low leakage
- No leakage in memory plane
- Minimal leakage in memory periphery
- Up to 3 times less leaky than conventional metal or via ROM
- The Dolphin quality
- Silicon Proven architecture
- Vias half as numerous in comparison with a traditional metal or via ROM
- CASSIOPEIA Architecture using bigger transistors for optimized read margin and low sensitivity to mismatch
Technical Specifications
Maturity
In_Production
TSMC
In Production:
180nm
G
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