Low noise amplifier with lange couplers for 20-40 GHz frequencies for 5G , satcom and other applications

Overview

RFLN03C is a three stage low noise amplifier with Lange Coupler at input & output side for perfect input and output matching to 50 ohms. It provides high gain over wide bandwidth, low Noise Figure, high isolation, stability. The LNA is designed to operate from 20 – 40 GHz using 0.1um GaAs pHEMT process. The LNA offers less than 4 dB noise figure, 18.8 dB of small signal gain, OP1dB of 14.5 dBm with low noise figure along with the flexibility of setting current and gain makes this LNA an ideal front end amplifier in 5G, Terrestrial communication system and Radar Application. Results are shown in datasheet with all parasitics & coupling effects at desired frequency.

Key Features

RF Frequency: 20-40 GHz
Gain of 18.8 dB.
Output P1dB of 14.5 dBm.
Noise Figure @ 20 GHz : 3.5 dB
Noise Figure @ 24 GHz : 3 dB
Noise Figure @ 30 GHz : 3.17 dB
Noise Figure @ 35 GHz : 3.19 dB
Noise Figure @ 40 GHz : 3.8 dB
OIP3 is 22.3 dBm.
Output Saturated Power: 17 dBm.
Bias: VDD1, VDD2= 3 V, VGG1, VGG2=-0.6 V, VGG3, VGG4=-0.4 V ID= 182mA
0.1um GaAs pHEMT Technology
Die size: 2.85 mm x 2.62 mm
This IP is similar in performance with MACOM's XL1000-BD-000V

Benefits

Wideband gain
Low noise figure over the band
Lange coupler provides good 50? Matched RF Input and Output over wideband
Wideband stability
Low cost
Low current
Porting: IP can be ported to 65nm Si / CMOS node

Block Diagram

Applications

5G LNA and RF transceiver
Satellite Communication
Point to point communication system
Backhaul Application
IoT

Deliverables

Schematic and Netlist
Abstract Model (.lib file)
Layout View (Optional)
Behavioral model (Circuit & EM simulation)
Extracted View (Optional)
GDSII
DRC, LVS, Antenna report
Test bench with saved configuration (Optional)
Documentation

Technical Specifications

Foundry, Node

Win Semiconductor, 100 nm GaAs pHEMT process

Maturity

IC design and layout is complete, to be fabricated soon

Availability

Now

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