The WEAKA01PD22G is a power detector capable of detecting signals in the range of 3 dBm to 18 dBm with an accuracy of +/-0.5 dB. It produces a voltage proportional to the received signal power with the maximum output voltage being 1.1 V. It consists of 2 parts, the RF and the Analog processing part. Multiplexing can also be used to support multiple RF inputs with minimal impact on the silicon area using the same analog part. The detector is ideal for detecting the envelope of modulated signals in the frequency range from 10 GHz to 80 GHz.
Ka Band power detector
Overview
Key Features
- Power Supplies: 0.8 V , 1.8 V
- Dynamic Range (+/-0.5 dB accuracy) :15 dB
- Input Differential Signal
- Single ended Output Voltage
- Maximum Input Power : 18 dBm
- Minimum Input Power : 3 dBm
- Power Consumption : 760 uW
- Settling Time (RF @ 10GHz) : 294 nsec
- Settling Time (RF @ 80GHz) : 470 nsec
- Silicon Area RF Part : 70 um x 75 um
- Silicon Area BB Part : 173 um x 120 um
- Process : 22FDX
- Metal Option : 19
Block Diagram
Technical Specifications
Foundry, Node
GLOBALFOUNDRIES, 22FDX
Maturity
GDS Ready
GLOBALFOUNDRIES
Pre-Silicon:
22nm
FDX
Related IPs
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- Front End Module operating from 24 – 30 GHz and can be used in low power Ka band applications
- Driver Amplifier operating from 37 - 40 GHz and can be used in Ka band applications or to drive the high-power amplifier.
- Buffer Amplifier operating from 25-62.5 GHz and can be used in Ka / V band application or to drive the high power amplifier.
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