I/O Library in TSMC 130nm 5V Gen3 BCD

Overview

A TSMC 130nm Wirebond/Flipchip compatible I/O Library with 5V GPIO, 5V ODIO, 5V Analog I/O and 5V Power Supply I/O.

This silicon-proven, I/O Library features a 5V General Purpose I/O, 5V Open-Drain I/O, 5V Analog I/O, 5V Power Supply and an area efficient 5V ESD protection scheme. The functional cells in the library (GPIO & ODIO) feature an Output Enable pin which, when de-asserted, place the I/O in a HiZ state, and can control multiple modes of output operation with the Output Mode Control pins. The input RX path for this library all have selectable operations between a Schmitt trigger input with hysteresis, a standard buffer with no hysteresis, and a low input voltage mode that can receive a voltage level much lower than the I/O supply without causing metastability or large leakage current. The library has no poly orientation limitations and can be used in any orientation. The library cells are only built up to metal three, but include an metal 4 pad anchor that can be overlaid with either a wirebond or connected to a BUMP. ESD design level are 2kV HBM, 500V CDM and +/-125mA Latch-up.

Operating Conditions

Parameter Value
VDDIO 1.1V to 5.5V
Core VDD 1.71V to 5.5V
BEOL 1P4M
Temperature –40C to 125C
ESD 2kV HBM & 500V CDM

Cell Summary

Cell Type Cell Size
GPIO 120um x 75um
ODIO 98um x 55um
GPI 118um x 55um
ESD IO 35um x 55um
ESD VCC 35um x 55um
ESDRC IO 50um x 55um
ESDRC VCC 50um x 55um
ESDRC IO2 171.32um x 55um
ESDRC VCC2 171.32um x 55um



 

Key Features

  • Transmit   path:  two  drive strengths,  CMOS     push-pull mode,   Open-Drain    NMOS     mode,   Open-Drain    PMOS  mode
  • Receive Path: Select from three input buffers
  • Resistance value: select from three resistances (10Kohm, 100Kohm, 1Mohm)
  • Select VDDIO/GND Termination

Block Diagram

I/O Library in TSMC 130nm 5V Gen3 BCD Block Diagram

Technical Specifications

Foundry, Node
TSMC 130nm 5V Gen3 BCD
TSMC
Pre-Silicon: 130nm BCD
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Semiconductor IP