The Rambus HBM3E / HBM3 controller cores are designed for use in applications requiring high memory bandwidth and low latency including AI/ML, HPC, advanced data center workloads and graphics.
The HBM3E Memory Subsystem
HBM3E is a high-performance memory that features reduced power consumption and a small form factor. It combines a 2.5D/3D architecture with a 1024-bit wide interface operating at a lower clock speed (as compared to GDDR6) to deliver higher overall throughput at a higher bandwidth-per-watt efficiency for AI/ML and HPC applications.
The Rambus HBM3E memory controller supports data rates up to 9.6 Gbps per data pin. The interface features 16 independent channels, each containing 64 bits for a total data width of 1024 bits. At maximum data rate, this provides a total interface bandwidth of 1229 GB/s.
The Rambus HBM3E memory controller supports HBM3E memory devices with 2, 4, 8, 12 and 16 DRAM stack height with densities of up 32 Gb. The subsystem maximizes bandwidth and latency via Look-Ahead command processing.
The Rambus HBM3E memory controller combined with the customer’s choice of PHY comprises a complete HBM3E memory subsystem.
