Front End Module operating from 2 – 7 GHz and can be used in S / C band for Wi-Fi 6 & SATCOM applications.

Overview

RFFEM02C Front End Module operates from 2 – 7 GHz and can be used in S / C for Wi-Fi 6 & SATCOM applications. The input and output are matched to 50 ohms with on-chip DC blocking capacitors. The device is specifically designed to use in point-to-point radios for 5G RF Transceiver & SATCOM. The technology used to design front-end module is 0.1um GaAs pHEMT process. Results are shown in datasheet with all parasitics & coupling effects at desired frequency.

Key Features

RF Frequency: 2-7 GHz
TX Gain of 28.3 dB
RX Gain of 13.9 dB
TX Output P1dB of 24.9 dBm
RX Output P1dB of 19.2 dBm
Noise Figure of 3 dB
Output Saturated Power: 25.2 dBm
Bias: VDD=4V, VGG= - 0.6V, ID= 213.8mA
Die size: 1.5 mm x 2.5 mm

Benefits

High power and gain
Flat gain over band
Low noise figure
Low cost
Porting: IP can be ported to 65nm Si / CMOS node

Block Diagram

Applications

Wi-Fi 6 Application
Satellite Communication
Residential Gateways
IOT

Deliverables

Schematic and Netlist
Abstract Model (.lib file)
Layout View (Optional)
Behavioral Model (Circuit & EM Simulation).
Extracted View (Optional)
GDSII
DRC, LVS, Antenna report
Test bench with saved configuration (Optional)
Documentation

Technical Specifications

Foundry, Node

Win Semiconductor, 100 nm GaAs pHEMT process

Maturity

IC design and layout is complete, to be fabricated soon

Availability

Now

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