Dual FPD-link, 30-Bits Color LVDS Receiver, 170Mhz (SVGA/FHD@120Hz) LVDS de-serializer 10:70 channel decompression with automatic de-skew

Overview


V-Trans ‘s FPD Link Receiver Macro is based on National Semiconductor openLDI specification v0.95 dated May 13th 1999 that allow the transfer of digital display data between a display source and a display device.

This receiver converts 10 LVDS, (low voltage differential signaling) data streams, into 30bits dual pixel CMOS data plus 10 control signals (VSYNC, HSYNC, DE, and 7 user-defined signals).

Thanks to its innovative lane to lane de-skew mechanism this macro can operate up to a maximum pixel rate of 170Mhz, LVDS data line speed is 1.19Gb/s, providing a total maximum bandwidth of 11.9Gb/s (1.487Gbytes per second).

Key Features

  • Layout structure based on 0.13um Logic 1P6M, 1P7M, or 1P8M Salicide 1.2V/3.3V process.
  • 1.2V/3.3V ±10% supply voltage, -40/+125°C
  • Complies with OpenLDI specification for digital display interfaces and LVDS IEEE Standard 1596.3- 1996+ ANSI/TIA/EIA-644-A Specifications.
  • Up to 11.9Gbps bandwidth (40 to 170Mhz pixel clock) per pixel channel (Full HD @ 120Hz)
  • +/-0.3 UI bus de-skew, relaxes timing constraint
  • Input clock detector (self reset when missing clock)
  • Spread-spectrum input clock support (can be used in SS systems)
  • Core cell area : [contact us]
  • Power consumption [contact us] @150Mhz
  • Built-in power pads with ESD protection.
  • Low leakage power-down mode <1uA.

Applications

  • This interface is suitable for TCON chips inside Flat panel displays, as a FPD-Link receiver.

Deliverables

  • Design kit includes :
    • LEF view and abstract gdsII
    • Verilog HDL behavioral model
    • Liberty (.lib) timing constraints for typical, worse and best corner case
    • Full Datasheet /Application Note with integration guidelines document
    • Silicon characterization report when available

Technical Specifications

SMIC
Pre-Silicon: 130nm G , 130nm LL
Silterra
Pre-Silicon: 130nm
TSMC
Pre-Silicon: 130nm G , 130nm LP
Tower
Pre-Silicon: 130nm
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Semiconductor IP