The LDO is capable of outputting 1.2V voltage with maximum power of 100mA and low drop out voltage of less than 200mV. The IP is fabricated in XFAB 250nm process and can be ported to foundry process nodes.
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Cap-less 100mA Low Noise LDO, XFAB 250nm
Overview
Key Features
- Input Voltage: 2.5V ~3.3V
- Output Voltage: 2.5V
- Maximum Output Current: 100mA
- Quiescent Current: 35uA
- Line Regulation: + 1.5%
- Load Regulation: 200ppm/mA
- Short-Circuit Protection
- Current Limiter
Deliverables
- Full Datasheet
- Application Note
- Integration Guidance
- Behavior Model
- GDSII Abstract (.LEF Format)
- Timing Library (.LIB Format)
- LVS Netlist (SPICE Compatible)
- Physical Design Database (GDSII Format)
- Silicon Validation Report
- AE Support
Technical Specifications
Foundry, Node
XFAB 250nm G / EFlash
Maturity
Silicon Proven
Availability
Now