8 track thick oxide standard cell library at TSMC 90 - low leakage and direct battery connection (operating voltages from 1.08 V to 3.63 V)

Overview

Key Features

• No need for a voltage regulator
• Cells designed with 3.3 V thick-oxyde transistors to support a wide operating voltage range from 3.3 V +/-10% to 1.2 V +/-10%
• Standard voltage range from 1.08 V up to 3.63 V thanks to patented flip flops
• Custom characterization corners down to 1.10 V +/-10% can be provided
• Ideal for always on clock islets (RTC) and always on functional islets (voice recognition)
• Logic blocks synthesized with SESAME BIV can be directly powered by the external battery
• Ultra-low leakage
• Leakage reduction of 1/700 for a 5,000 gates islet implemented with BIV at 3.3 V, compared to a conventional HVT library operating at 1.2 V
• Support of low voltage retention down to 0.85 V
• Possibility to remove regulators and so to decrease the leakage
• Higher density compared to HVT library combined with voltage regulator
• 7X gain in density for a 5,000 gates islet implemented with BIV at 3.3 V, compared to a conventional HVT library operating at 1.2 V
• 8-track cells
• SoC Integration secured and simplified from 3.63 V to 1.08 V
• Selection of the optimal characterization corners to maintain speed, reliability and consumption at low voltage
• Full set of high-low and low-high level shifters isolated or not

Technical Specifications