The WEA7681L130 consists of phase array element of 4 LNAs and a combiner. Each LNA has 3 stages. The WEA7681L130 functions as a MUX. Every LNA stage current is programmable. The chip has a build in FIFO for consecutive LNA sequencing operation. The chip has 3 integrated monitors i) 2.5V chip supply, ii) 1.2V LDO supply and iii) the chip temperature. The LNA gain is controlled by current steering of the last stage together with the LNA bias current on each stage. The chip has been implemented in the 130nm BiCMOS GlobalFoundries process.
76 GHZ to 81 GHz LNA Phase Array
Overview
Key Features
- Low Noise Amplifier
- Frequency Bandwidth 76-81 GHz
- LNA function as a MUX between 4 amplified RF inputs
- GainMAX> 20 dB
- NF < 5.6 dB
- Noise Figure, > -14 1dB
- Input Compression Point @100°C
- Gain control range: 20dB
- Current control of each stage of the LNA
- Supply Voltage 2.5V
- Area: 2.23 mm x 2.23 mm
- GF8XP 130nm BiCMOS GlobalFoundries
Block Diagram

Technical Specifications
Foundry, Node
GLOBALFOUNDRIES, GF 8XP
Maturity
Silicon Proven
GLOBALFOUNDRIES
Pre-Silicon:
130nm
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