512x8 Bits OTP (One-Time Programmable) IP, Tower Semiconductor SBC18H5 Family 180nm 1.8V/3.3V SiGe BiCMOS Process

Overview

The ATO00512X8TJ180SBC4NA is organized as 512 bits by 8 one-time programmable in 8-bit read and 1-bit program modes. This is a kind of non-volatile memory fabricated in Tower SBC18H5 180nm SiGe BiCMOS process. The OTP can be widely used in chip ID, security key, memory redundancy, parameter trimming, configuration setting, feature selection, and PROM, etc.

Key Features

Fully compatible with Tower SBC18H5 180nm SiGe BiCMOS 5th generation process
Low program voltage: 3.4 – 3.6 V VDDP, and 1.8 V ± 10% VDD, 1 bit at a time
Low read voltage: 1.8 V ± 10%V VDDP and 1.8 V ± 10% VDD, 8 bits at a time
High speed: 10µs program time per bit and read cycle 30ns (33MHz) 8-bit at a time
Asynchronous address and control input and latched output.
One additional row to store any information
Built-in I-FuseTM protection circuit
Built-in margin mode and test modes to generate pseudo-checkerboard patterns
Wide temperature: -40°C to 125°C read and 25°C program

Benefits

Small IP size
Wide operating voltage range
Wide operating temperature range
High reliability
Silicon characterized

Deliverables

Datasheet
Verilog behavior model and test bench
Timing library
LEF File
Phantom GDSII database

Technical Specifications

Foundry, Node

Tower Semiconductor SBC18H5 Family 180nm 1.8V/3.3V SiGe BiCMOS Process

Maturity

Silicon Proven & In Production

Availability

Now

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