1.8V 3.3V Tolerant General Purpose IO

Overview

The 1.8V GPIO 3VT library provides general purpose bidirectional I/O cells that are both fault tolerant and 3.3V tolerant. These programmable, multi-voltage I/O’s give the system designer the flexibility to design to a wide range of performance targets.

These libraries are offered at both 16nm and a 12nm shrink. They
are available in a staggered CUP wire bond implementation with a flip chip option.

To design a functional I/O power domain with these cells, an additional library is required – 1.8V Support: Power. That library contains an input-only buffer, isolated analog I/O, and a full complement of power cells along with corner and spacer cells to assemble a complete pad ring by abutment. An included rail splitter allows multiple power domains to be isolated in the same pad ring while maintaining continuous VDD/VSS for robust ESD protection.

Key Features

  • • High performance, programmable general purpose I/O cell
  • 3.3V tolerant only @ VDVDD = 1.8V
  • Fault tolerant @ PAD = 3.3V
  • • Staggered CUP wire bond implementation with flip chip option
  • • Power supply sequencing independent design with Power-On Control
  • • Robust ESD Protection
  • 2KV ESD Human Body Model (HBM)
  • ? Compliant with ANSI/ESDA/JEDEC JS-001-2017 (December 8, 2016)
  • 500V ESD Charge Device Model (CDM)
  • ? Compliant with JESD22-C101F (October 2013)
  • • Latch-up Immunity
  • Compliant with JESD78E (April 2016)
  • Tested using I-Test criteria of ±100mA at maximum ambient temperature of +125°C.

Deliverables

  • a. Physical abstract in LEF format (.lef)
  • b. Timing models in Synopsys Liberty formats (.lib and .db)
  • c. Calibre compatible LVS netlist in CDL format (.cdl)
  • d. GDSII stream (.gds)
  • e. Behavioral Verilog (.v)
  • f. Layout Parasitic Extraction (LPE) SPICE netlist (.spice)
  • g. Databook (.pdf)
  • h. Library User Guide - ESD Guidelines (.pdf)

Technical Specifications

Foundry, Node
TSMC 12nm
Maturity
Silicon Proven
Availability
Available Now
TSMC
Pre-Silicon: 12nm
Silicon Proven: 12nm
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Semiconductor IP