SerDes PHY IP

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Compare 216 IP from 39 vendors (1 - 10)
  • 100G PAM4 Serdes PHY - 14nm
    • The 100G SERDES PHY IP for VSR supports up to 100 Gbps data rate with low-power consumption and a small footprint.
    • It has advanced features such as equalization, and clock and data recovery, ensuring reliable data transmission.
    • The IP can be integrated into a variety of applications such as networking, data centers, and high-performance computing.
    Block Diagram -- 100G PAM4 Serdes PHY - 14nm
  • Programmable PCIe2/SATA3 SERDES PHY on TSMC CLN28HPC
    • Programmable SERDES analog front end that supports 1 to 6+ Gbps standard serial protocols
    • Compact form factor – 0.116 mm2 active silicon area per lane including ESD
    • Industry leading low power – typically 6.3 mW/Gbps (@6Gbps) including termination
    • Minimal latency – 3 UI between parallel transfer and serial transmission
    Block Diagram -- Programmable PCIe2/SATA3 SERDES PHY on TSMC CLN28HPC
  • PCI Express Gen5 SERDES PHY on Samsung 8LPP
    • Industry leading low power PMA macro – 224mW per lane at 28Gbps (8.0 mW/Gbps) inclusive of Tx and Rx PLLs, termination, bias, etc.
    • Compact form factor – 0.38 mm2 active silicon area per lane including ESD
    • Minimal latency – 3 UI between parallel transfer and serial transmission
    • Single-lane macro scalable to unlimited link width – x1, x2, x4, x8, x16, etc.
  • PCI Express Gen4 SERDES PHY on Samsung 7LPP
    • Industry leading low power PMA macro – 132.7mW per lane at 16Gbps (8.4mW/Gbps) inclusive of Tx and Rx PLLs, termination, bias, etc.
    • Compact form factor – 0.32 mm2 active silicon area per lane including ESD
    • Minimal latency – 3 UI between parallel transfer and serial transmission
    • Single-lane macro scalable to unlimited link width – x1, x2, x4, x8, x16, etc.
  • PCI Express Gen3/Enterprise Class SERDES PHY on Samsung 28LPP
    • Industry leading low power PMA macro – 88mW per lane at 8Gbps (11.0 mW/Gbps) inclusive of Tx and Rx PLLs, termination, bias, etc.
    • Compact form factor – 0.216 mm2 active silicon area per lane including ESD
    • Enterprise class Long Reach 5-tap DFE supporting beyond standard PCIe Channels
    • Minimal latency – 3 UI between parallel transfer and serial transmission
  • PCI Express Gen3/4 Enterprise Class SERDES PHY on Samsung 14LPP
    • Industry leading low power PMA macro – 132.7mW per lane at 16Gbps (8.4mW/Gbps) inclusive of Tx and Rx PLLs, termination, bias, etc.
    • Compact form factor – 0.266 mm2 active silicon area per lane including ESD
    • Enterprise class Long Reach 5-tap DFE supporting beyond standard PCIe Channels
    • Minimal latency – 3 UI between parallel transfer and serial transmission
  • PCI Express Gen3 SERDES PHY on TSMC CLN40G
    • Programmable SERDES analog front end that supports 1 to 8 Gbps standard serial protocols
    • Compact form factor – 0.107 mm2 active silicon area per lane including ESD
    • Industry leading low power – typically 6.9 mW/Gbps including termination
    • Minimal latency – 3 UI between parallel transfer and serial transmission
  • PCI Express Gen3 SERDES PHY on Samsung 7LPP
    • Industry leading low power PMA macro – 36mW per lane at 8Gbps (4.5mW/Gbps) inclusive of Tx and Rx PLLs, termination, bias, etc.
    • Compact form factor – 0.1 mm2 active silicon area per lane including ESD
    • Minimal latency – 3 UI between parallel transfer and serial transmission
    • Single-lane macro scalable to unlimited link width – x1, x2, x4, x8, x16, etc.
  • PCI Express Gen3 SERDES PHY on Samsung 28LPP
    • Programmable SERDES analog front end that supports 1 to 8 Gbps standard serial protocols
    • Compact form factor – 0.134 mm2 active silicon area per lane including ESD
    • Industry leading low power – typically 7.0 mW/Gbps including termination
    • Minimal latency – 3 UI between parallel transfer and serial transmission
  • PCI Express Gen3 / SATA3 SERDES PHY on Samsung 28FDSOI
    • Programmable SERDES analog front end that supports 1 to 8 Gbps standard serial protocols
    • Compact form factor – 0.165 mm2 active silicon area per lane including ESD
    • Industry leading low power – typically 6.5 mW/Gbps including termination
    • Finely configurable receiver impedance, CTLE gain and bandwidth, with fully adaptive CTLE and DFE
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