Embedded Memories IP for VIS

Compare 86 Embedded Memories IP for VIS from 2 vendors (1 - 10)

8Kx8 Bits OTP (One-Time Programmable) IP, VIS 0.15µm 1.8V/5V BCD GIII Process
- Small IP size, 1P4M (M1+3Mx)
- Low program voltage/current
- Low read voltage/current
Embedded OTP (One-Time Programmable) IP, 512x12 bits for 1.5V/7V/32V HV
- Logic Embedded IP
- Programming NeoFuse cell by using quantum tunneling mechanism
- High yield performance
- Small IP size
Embedded OTP (One-Time Programmable) IP, 512x12 bits for 1.5V/7V/32V HV
- Logic Embedded IP
- Programming NeoFuse cell by using quantum tunneling mechanism
- High yield performance
- Small IP size
Embedded EEPROM IP, 32x16 bits for 1.8V/3.3V Logic
- Logic Embedded IP
- Programming with FN program, erasing with FN erase
- High yield performance
- Small IP size
Embedded EEPROM IP, 1Kx8 bits for 3.3V/18V HV
- Logic Embedded IP
- Programming with FN program, erasing with FN erase
- High yield performance
- Small IP size
Embedded MTP (Multi-Time Programmable) IP,8x8 bits for 2.5V/5V/30V BCD
- Logic Embedded IP
- Programming with channel hot electron injection, erasing with UV illumination
- High yield performance
- Small IP size
Embedded OTP (One-Time Programmable) IP, 128x8 bits for 1.8V/13.5V HV
- Logic Embedded IP
- Programming NeoFuse cell by using quantum tunneling mechanism
- High yield performance
- Small IP size
Embedded Flash IP,16Kx32 bits for 1.8V/5V/32V HV
- Logic Embedded IP
- Programming with channel hot electron injection, erasing with FN erase
- High yield performance
- Small IP size
Embedded Flash IP,64Kx8 bits for 1.8V/5V/32V HV
- Logic Embedded IP
- Programming with channel hot electron injection, erasing with FN erase
- High yield performance
- Small IP size
Embedded Flash IP,32Kx8 bits for 1.8V/5V/32V HV
- Logic Embedded IP
- Programming with channel hot electron injection, erasing with FN erase
- High yield performance
- Small IP size