General-Purpose I/O (GPIO) IP for Samsung

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Compare 5 General-Purpose I/O (GPIO) IP for Samsung from 2 vendors (1 - 5)

1.8V general purpose I/O for 4nm FinFET
- Enable higher voltage operation, beyond the foundry IO levels
- Easily replace existing I/O cells
- Integrated scalable ESD protection
- Bias circuit can be shared with multiple I/Os
3.3V general purpose I/O for 28nm CMOS
- Enable higher voltage operation, beyond the foundry IO levels
- Easily replace existing I/O cells
- Integrated scalable ESD protection
- Bias circuit can be shared with multiple I/Os
High voltage tolerant I/O
- Scalable robustness
- Area efficient
- low capacitance option
On-chip protection against IEC61000-4-2 events
- Analog Pads
- Power Pads
- Ground Pads
3.3V Wide-Range General Purpose I/O Pad Set
- Multi-Voltage (1.8V, 2.5V, 3.3V)
- LVCMOS / LVTTL input with selectable hysteresis
- Programmable drive strength (rated 2mA to 12mA)
- Selectable output slew rate