ESD Protection IP for Samsung
Welcome to the ultimate ESD Protection IP for Samsung hub! Explore our vast directory of ESD Protection IP for Samsung
All offers in
ESD Protection IP
for Samsung
Filter
Compare
7
ESD Protection IP
for Samsung
from 2 vendors
(1
-
7)
-
1.8V general purpose I/O for 4nm FinFET
- Enable higher voltage operation, beyond the foundry IO levels
- Easily replace existing I/O cells
- Integrated scalable ESD protection
- Bias circuit can be shared with multiple I/Os
-
3.3V general purpose I/O for 28nm CMOS
- Enable higher voltage operation, beyond the foundry IO levels
- Easily replace existing I/O cells
- Integrated scalable ESD protection
- Bias circuit can be shared with multiple I/Os
-
High voltage tolerant I/O
- Scalable robustness
- Area efficient
- low capacitance option
-
Analog I/O - low capacitance, low leakage
- Scalable robustness
- Area efficient
- low capacitance option
-
on-chip ESD protection
- Analog I/Os
- ESD Power protection
- Ground pads
- ESD protection cells
-
On-chip protection against IEC61000-4-2 events
- Analog Pads
- Power Pads
- Ground Pads
-
3.3V Wide-Range General Purpose I/O Pad Set
- Multi-Voltage (1.8V, 2.5V, 3.3V)
- LVCMOS / LVTTL input with selectable hysteresis
- Programmable drive strength (rated 2mA to 12mA)
- Selectable output slew rate