VeriSilicon CHRT 0.13um 1.2V/2.5V DUPIO_01 Library
Overview
VeriSilicon CHRT 0.13um 1.2V/2.5V DUP I/O Cell Library developed by VeriSilicon is optimized for Chartered Semiconductor Manufacturing (CHRT) 0.13um Logic 1P8M Salicide 1.2/2.5V process. This library supports Device Under Pad (DUP). This library includes analog I/O cell part and digital I/O cell part, and the digital I/O cells can take 3.3V tolerance and work with configurable and variable driving strength between 2mA - 24mA. This library supports Inline I/O pad.
Key Features
- CHRT 0.13um Logic 1P8M Salicide 1.2V/2.5V process
- Low area and low cost design using DUP technique
- 1.2V core power, 2.5V IO, digital IO supports 3.3V tolerance
- This library includes analog I/O cell part
- Configurable output driving capability with different slew rate
- Supports configurable pull up and pull down resistor
- Supports both CMOS input and Schmitt input with LVTTL compatible
- Provides 2Mhz ~ 27Mhz OSC IO cell
- Suitable for six, seven, or eight metal layers of physical design
- Competitive pad pitch and height
Deliverables
- Databook in electronic form
- Verilog models and Synopsys synthesis models
- Cadence Silicon Ensemble Abstracts (LEF), Avanti! Apollo data, GDS II, LVS netlist
Technical Specifications
Foundry, Node
CHRT 0.13um
Related IPs
- VeriSilicon CHRT 0.13um 1.2V/3.3V DUPIO_01 Library
- VeriSilicon TSMC 0.13¦Ìm 1.2V/2.5V DUPIO_01 Library
- VeriSilicon SMIC 0.13¦Ìm 1.2V/2.5V DUPIO_01 Library
- VeriSilicon SMIC 0.13um 1.2V/2.5V OSC
- SMIC 0.13um General Process, 1.2V/2.5V Standard Cell Library
- SMIC 0.13um High Vt Process, 1.2V/2.5V standard cell Library