USB 2.0 PHY - SMIC 55nm Eflash

Key Features

  • HBM:8KV
  • Low cost; low size 0.175mm^2 in 65nm process(including 7 PADs), and 0.142mm^2 in 55nm process(including 7 PADs)

Benefits

  • Cost saving compared to eflash technology

Deliverables

  • Technical documents,GDS hard macro to foundry for IP merge

Technical Specifications

Foundry, Node
SMIC 55nm Eflash
Maturity
Silicon proven
Availability
immediate
SMIC
Silicon Proven: 55nm G , 55nm LL
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Semiconductor IP