Ultra-low standby current BGP
Key Features
- Operating junction temperature: -40°C~+25°C~+125°C;
- Analog power supply 2.0V ~5.0V;
- Ultra-low power dissipation structure, as low as 80/160nA;
- Shutdown current is lower than 5nA;
- Two typical reference voltage are 0.9V and 0.7V;
- Low temperature coefficient, as low as 0.08mV/°C
- Provides some 20nA/40nA PMOS current mirrors to help customers biasing;
- Area (No analog PADs, SMIC 55nm embedded-flash process)
- Total:331um×227um?0.076mm2
Technical Specifications
Foundry, Node
SMIC 55nm Eflash
Maturity
Silicon proven
Availability
immediate
SMIC
Silicon Proven:
55nm
G
,
55nm
LL
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