Ultra low quiescent current LDO in TSMC 40nm ULP eFlash

Overview

Ultra low quiescent current LDO in TSMC 40nm ULP eFlash

Key Features

  • Very low quiescent and leakage for Low-Power
  • Can supply always-on very low load
  • Supports wide input voltage range from 2.7V to 5.5V

Technical Specifications

Short description
Ultra low quiescent current LDO in TSMC 40nm ULP eFlash
Vendor
Vendor Name
Foundry, Node
TSMC 40nm uLP eFlash
Maturity
Pre-silicon
TSMC
Pre-Silicon: 40nm LP
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Semiconductor IP