Ultra-Low-Power Bandgap Voltage Reference in 40nm CMOS

Overview

The ODT-REF-40LP-SV1P8-ULP140N is an ultra-low power CMOS bandgap reference designed in a 40nm standard CMOS process without needing the use of any bipolar devices. This IP operates over a temperature range of -40 to 125C while taking less than 200nA from the supply, with a nominal current of 140nA. A single room temperature trim can be used to achieve a temperature coefficient less than 40ppm/C.

Key Features

140nA supply current
Less than 40ppm/C temperature coefficient
- 40C to 125C operation
Supply voltage down to 1.62V
Nominal 0.6 V output voltage
Buffered output voltage
Internal startup circuit
10nA typical, 20nA max sleep current
Standard CMOS process
No external components

Benefits

High Performance Low Power, Low Area

Block Diagram

Applications

General purpose software defined radio
DOCSIS transmitter
Cellular base station
Broadband communications
Wideband satellite transmitter

Deliverables

Datasheet
Hard Macro (GDSII)
Characterization Report (as applicable)
Abstract View (LEF) for top level connectivity
Integration and Customer Support

Technical Specifications

Foundry, Node

TSMC 40nm

Maturity

Silicon Characterized

Availability

Now

TSMC

Pre-Silicon: 40nm LP

Request Info