Ultra-low-power 2.4 GHz transceiver for Bluetooth 5.3, 802.15.4 and IoT

Overview

icyTRX for the most demanding low-power applications

The icyTRX ultra-low-power RF transceiver is designed to meet standards such as Bluetooth Low Energy (BLE), 802.15.4 PHY Layer (e.g. ZigBee), and proprietary standards with data rates from 62.5 kBit/s up to 4 Mbit/s. icyTRX offers 5.3 mW consumption in receive mode from a 1.0 V supply. icyTRX is a complete transceiver that is designed for miniaturization, yielding an area of analog RF of less than 1 mm2 in 55 nm CMOS, requiring minimal external components thanks to high degree of integration. icyTRX is designed for easy integration into ASICs and SoCs.

Key Features

  • Voltage supply: 1.0 V to 1.2 V
  • RX current 5.3 mA (1 MBit/s)
  • TX current 8.6 mA (@ 1 dBm) 
  •  Exceeds BLE and IEEE802.15.4 requirements
  •  Proprietary modes with adjustable bitrate from  62.5 kBit/s up to 4 Mbit/s
  •  Bluetooth 4.x sensitivity: -97 dBm at 1 Mbit/s
  • Bluetooth 5 sensitivity: -95 dBm at 2 Mbit/s, -104 dBm at 125 kbit/s (Long Range S=8) and -101 dBm at 500 kbit/s (Long Range S=2) 
  • BT 5.1 to 5.3 compatible
  • No calibration needed, ultra-fast settling
  • Single Rx and Tx port without any RF matching  component required 
  • Fully integrated FSK-based modem, with programmable  pulse shape, data rate and modulation index
  • Link layer functionalities, including packet handling, CRC,  separate Rx and Tx FIFOs, AES-CCM
  • APB and SPI interfaces available
  • Optimized Power Management Unit available
  • Analog RF silicon area < 1.0 mm2

Block Diagram

Ultra-low-power 2.4 GHz transceiver for Bluetooth 5.3, 802.15.4 and IoT Block Diagram

Applications

  • Wearable sensors
  • Wireless sensor networks
  • Smart watches + fitness bands
  • Indoor positioning 

Deliverables

  • Available under license as an embedded IP block for integration in CMOS SoCs and ASICs
  • Samples and development kits are available
  • Silicon proven in various foundries and metal stack

Technical Specifications

GLOBALFOUNDRIES
In Production: 55nm
Silicon Proven: 55nm
TSMC
In Production: 55nm ULP
Silicon Proven: 55nm ULP
UMC
Silicon Proven: 90nm G
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Semiconductor IP