Ultra-Low-Power (<140nA) Bandgap Voltage Reference in 40nm CMOS
Overview
The ODT-REF-40LP-SV1P8-ULP140N is an ultra-low power CMOS bandgap reference designed in a 40nm standard CMOS process without needing the use of any bipolar devices. This IP operates over a temperature range of -40 to 125C while taking less than 200nA from the supply, with a nominal current of 140nA. A single room temperature trim can be used to achieve a temperature coefficient less than 40ppm/C.
Key Features
- 140nA supply current
- Less than 40ppm/C temperature coefficient
- - 40C to 125C operation
- Supply voltage down to 1.62V
- Nominal 0.6 V output voltage
- Buffered output voltage
- Internal startup circuit
- 10nA typical, 20nA max sleep current
- Standard CMOS process
- No external components
Benefits
- High Performance Low Power, Low Area
Applications
- General purpose software defined radio
- DOCSIS transmitter
- Cellular base station
- Broadband communications
- Wideband satellite transmitter
Deliverables
- Datasheet
- Hard Macro (GDSII)
- Characterization Report (as applicable)
- Abstract View (LEF) for top level connectivity
- Integration and Customer Support
Technical Specifications
Foundry, Node
40nm
Maturity
Silicon Characterized
Availability
Now
Related IPs
- Ultra-Low-Power Bandgap Voltage Reference in 40nm CMOS
- Ultra-Low-Power Bandgap Voltage Reference in 28nm CMOS
- Ultra-Low-Power Bandgap Voltage Reference in 6nm CMOS
- Ultra-Low-Power Bandgap Voltage Reference in 12nm CMOS
- Ultra-Low-Power Bandgap Voltage Reference in TSMC 4nm CMOS
- Low-Power Bandgap Reference - Low Integrated Noise (62.5µVrms) in TSMC 40nm