This macro-cell is an ultra-low-power bandgap voltage reference (1.23V) with low temperature coefficient (>40ppm/ºC) consuming 210nA. A 5-bit digital bus allows TC adjust against process variations. It provides a built-in 10nA PTAT current reference with 4 outputs.
The core can be easily retargeted to any other CMOS technology because it uses typical devices of standard CMOS technologies (MOS and PN junctions).
ULP Bandgap Voltage Reference in Silterra 0.18um
Overview
Key Features
- Ultra low power (210nA)
- 1.23V reference
- Low TC (>40ppm/oC after trimming)
- Supply: 1.8V
- PTAT current reference (10nA)
- Indicative area: 0.05mm2
Applications
- RFID
- Battery powered ICs
- IoT applications
Deliverables
- Datasheet/Integration Guide
- HDL Model
- Flat GDSII database/LVS netlist
- Customer Support
Technical Specifications
Foundry, Node
SilTerra 0.18 um
Maturity
GDS Available
Silterra
Pre-Silicon:
180nm
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- Bandgap Voltage / Current Reference GlobalFoundries