Three-Speed Inline Library with Open Drain I/0 in TSMC 22nm

Overview

A TSMC 22nm Inline, Flip Chip compatible library with three-speed GPIOs and I2C compliant ODIO.

This silicon-proven, flip chip library in TSMC 22nm boasts three variants of GPIOs and one ODIO. All GPIO and ODIO cells have NS and EW orientation. All GPIO types are classified based on speed: 25MHz, 75MHz and 150MHz. All GPIO speed variants can operate at different post-driver voltage, which can be set at the system level and dynamically changed in the system if needed. The I/O includes a weak pull-up or pull-down resistor (approx. 60 Ohms). The ODIO is designed for lower speed interfaces but can be used as a high-voltage, high-speed input at up to 100MHz. The library is designed to allow for independent power sequences of any I/O cell, which is accomplished with an intrinsic power-on-control architecture. In the case of GPIO and ODIO, only when all powers are up and detected as ON, will the I/Os begin to function, otherwise they will remain in a high impedance state. Beyond standard ESD protection, the library is tolerant to 61000-4-2 IEC standard to 2kV.

 Operating Conditions

Parameter Value
VDDIO 1.8V or 3.3V
Core 0.7V/0.8V/0.9V
Tj -40C to 125C
ESD >2kV HBM, 500V CDM

 Cell Size and Metal Stack

Cell Size Metal Stack
30um x 130um 1P9M_6X1Z1U

Library Cell Summary

Cell Type Feature
Supply 1.8V always on
IO150 GPIO, operates at 150MHz (NS&EW)
IO75 GPIO, operates at 75MHz (NS&EW)
IO25 GPIO, operates at 25MHz (NS&EW)
ODIO Open-Drain I/O (NS&EW)

 Standards

  •   I2C and I3C
  •   eMMC, SPI, SMBus
  •   DDC, CEC, LPDDR
  •   ONFI, SDIO, LVCMOS
  •   UARTS

Block Diagram

Three-Speed Inline Library with Open Drain I/0 in TSMC 22nm Block Diagram

Technical Specifications

TSMC
In Production: 22nm
Pre-Silicon: 22nm
Silicon Proven: 22nm
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